| PART |
Description |
Maker |
| KPS1008C |
photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC
|
KODENSHI KOREA CORP.
|
| TLP722 |
Photocoupler Photo-Diode
Photocoupler Photo−Diode
|
TOSHIBA[Toshiba Semiconductor]
|
| TLP190B07 TLP190B |
Photocoupler GaA?As Ired & Photo−Diode Array
Photocoupler GaAГAs Ired & Photo−Diode Array
|
Toshiba Semiconductor
|
| S11153-01MT-15 |
Photo IC diode
|
Hamamatsu Corporation
|
| S1223 |
SI PHOTO DIODE
|
Hamamatsu Corporation
|
| S1227-1010BR S1227-66BQ |
PHOTO DIODE
|
|
| BPW82L |
PHOTO DIODE
|
VISHAY TELEFUNKEN
|
| MXP1039PV-V |
PHOTO DIODE
|
MICROSEMI CORP
|
| KOD-3005 |
Photo diode IC
|
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
|
| MTD2001M |
Photo Diode
|
Marktech Corporate
|
| BPD-BQ314 BPD-GQ9F1 BPD-FQ9E1 BPD-RQ9DY-A |
PHOTO DIODE
|
American Bright Optoelectronics, Corp.
|
| BPD-RQ0AIV1 |
PIN PHOTO DIODE
|
American Bright Optoelectronics, Corp.
|
